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 2 - 8 GHz Medium Power Gallium Arsenide FET Technical Data
ATF-45171
Features
* High Output Power: 29.0 dBm Typical P 1 dB at 4 GHz * High Gain at 1dB Compression: 10.5 dB Typical G1 dB at 4 GHz * High Power Efficiency: 38% Typical at 4 GHz * Hermetic Metal-Ceramic Stripline Package
range. This nominally 0.5 micron gate length GaAs FET is an interdigitated four-cell structure using airbridge interconnects between drain fingers. Total gate periphery is 2.5 millimeters. Proven gold based metallization systems and nitride passivation assure a rugged, reliable device. This device is suitable for applications in space, airborne, military ground and shipboard, and commercial environments. It is supplied in a hermetic high reliability package with low parasitic reactance and minimum thermal resistance.
70 mil Flange Package
Description
The ATF-45171 is a gallium arsenide Schottky-barrier-gate field effect transistor designed for medium power, linear amplification in the 2 to 8 GHz frequency
Electrical Specifications, TA = 25C
Symbol P1 dB G1 dB add gm IDSS VP Parameters and Test Conditions Power Output @ 1 dB Gain Compression: VDS = 9 V, IDS = 250 mA 1 dB Compressed Gain: VDS = 9 V, IDS = 250 mA Efficiency @ P1 dB: VDS = 9 V, IDS = 250 mA Transconductance: VDS = 2.5 V, IDS = 250 mA Saturated Drain Current: VDS = 1.75 V, VGS = 0 V Pinch-off Voltage: VDS = 2.5 V, IDS =12.5 mA f = 4.0 GHz f = 8.0 GHz f = 4.0 GHz f = 8.0 GHz f = 4.0 GHz Units dBm dB % mmho mA V 400 -5.4 Min. 28.0 9.5 Typ. Max. 29.0 28.0 10.5 4.5 38 200 600 -4.0 800 -2.0
5-95
5965-8734E
ATF-45171 Absolute Maximum Ratings
Symbol VDS VGS VGD IDS PT TCH TSTG Parameter Drain-Source Voltage Gate-Source Voltage Gate-Drain Voltage Drain Current Power Dissipation [2,3] Channel Temperature Storage Temperature Units V V V mA W C C Absolute Maximum[1] +14 -7 -16 IDSS 3.6 175 -65 to +175
Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. TCASE TEMPERATURE = 25C. 3. Derate at 24 mW/C for TCASE > 24C. 4. The small spot size of this technique results in a higher, though more accurate determination of jc than do alternate methods. See MEASUREMENTS section for more information.
Thermal Resistance: Liquid Crystal Measurement:
jc = 42C/W; TCH = 150C 1 m Spot Size[4]
ATF-45171 Typical Performance, TA = 25C
30 20 35 30 29
P1 dB (dBm)
P1 dB
25
20 15
G1 dB (dBm) POUT (dBm)
25 20 15 10 5 40 30 20 10 0 0 5 10 15 PIN (dBm) 20 25 30 0 1.0
add (%) GAIN (dB)
MSG
15
28
G1 dB
10
10
|S21|2
MAG
27
5
5
MSG
26 2.0
4.0
6.0
0 8.0 10.0 12.0
0
2.0
4.0 6.0
10.0 14.0
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 1. Power Output @ 1 dB Gain Compression and 1 dB Compressed Gain vs. Frequency. VDS = 9V, IDS = 250 mA.
Figure 2. Output Power and Power Added Efficiency vs. Input Power. VDS = 9 V, IDS = 250 mA, f = 4.0 GHz.
Figure 3. Insertion Power Gain, Maximum Available Gain and Maximum Stable Gain vs. Frequency. VDS = 9 V, IDS = 250 mA.
5-96
Typical Scattering Parameters, Common Emitter, Z O = 50 , TA = 25C, VDS = 9 V, IDS = 250 mA
Freq. GHz 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 S11 Mag. .91 .83 .83 .86 .86 .85 .84 .84 .85 .85 .85 .83 .80 .77 Ang. -83 -137 -167 174 162 152 138 124 114 106 100 95 76 59 dB 14.5 10.8 7.4 4.4 2.1 0.7 0.1 -0.9 -2.5 -4.3 -5.2 -6.2 -6.7 -8.0 S21 Mag. 5.30 3.45 2.34 1.66 1.28 1.09 1.01 .90 .75 .61 .55 .49 .46 .40 Ang. 122 83 54 32 12 -3 -22 -40 -59 -70 -81 -90 -107 -125 dB -26.7 -26.4 -26.0 -25.5 -25.1 -24.7 -24.4 -23.8 -23.4 -22.5 -21.6 -20.8 -19.3 -18.9 S12 Mag. .046 .048 .050 .053 .055 .058 .060 .064 .068 .075 .083 .091 .109 .113 S22 Ang. 46 19 5 2 0 -2 -6 -13 -19 -25 -30 -39 -50 -61 Mag. .37 .26 .31 .43 .52 .56 .59 .62 .66 .71 .76 .79 .81 .83 Ang. -46 -91 -131 -155 -167 -176 173 154 135 123 119 111 98 78
A model for this device is available in the DEVICE MODELS section.
70 mil Flange Package Dimensions
.270 MIN 6.86 MIN 4 SOURCE
.26 6.7 GATE 1 .015 .381 DRAIN 3 .08 2.0 .24 6.0
2
SOURCE
.02 .50
.003 .002 .08 .05
.070 1.78
.05 1.3
Notes: (unless otherwise specified) 1. Dimensions are in mm 2. Tolerances in .xxx = 0.005 mm .xx = 0.13
.034 .86
Package marking code is 451
5-97


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